EUV- and Plasma Technology
| BOOTH 61 E 119 / E 112.2 | Extreme Ultraviolet Radiation: A Versatile Tool for Nanotechnology Extreme ultraviolet and soft x-ray radiation (XUV, 1-50nm, or EUV, at around 13.5nm) enables a variety of new optical, analytical and imaging procedures. The distinct features of XUV light such as the short wavelength allow resolutions in the range of a few nanometers in printing or imaging. Its strong interaction with matter permits high elemental contrast and photochemical sensitivity. Taking into account the recent progress in the development of sources and optics, XUV applications in the semiconductor industry, thin-film technology, life- and material sciences are envisioned. Examples are the determination of element composition, layer thickness and surface roughness from grazing incidence reflectivity or defect characterization from scattered light measurements using EUV dark field microscopy. Relevant applications are, e.g., mapping of mask blanks for EUV lithography, which requires the ability to scan large surfaces for the presence of small printable defects as rapid as possible or the examination of ultra-thin gate oxides or interlayers. Contact Person M. Sc. Stefan Herbert, M. Sc. Aleksey Maryasov, Matus Banyay M.E. Phone +49 241 8906-644 stefan.herbert@ilt.fraunhofer.de Lehrstuhl für Technologie Optischer Systeme TOS | |
| BOOTH 62 E 119 | Nanopatterning with EUV Interference Lithography TeInterference lithography (IL) with extreme ultraviolet (EUV) radiation is one of the most promising candidate technologies for resist patterns in the sub-20nm range. The distinct features of EUV light such as the short wavelength, allowing for resolutions within the range of a few nanometers in printing (down to Ï€/4), and its strong interaction with matter, which permits photochemical sensitivity, make it a promising candidate for future nanostructuring systems. Utilizing the experience of Fraunhofer ILT with plasma sources of high intensity EUV radiation, the nanopatterning setup for EUV Interference Lithography was built in RWTH Aachen University (RWTH-TOS). The setup is operating with 2" substrates, with a single illumination field size around 100?m*100?m. The method is substrate-independent, allowing for great flexibility of the technique. Typical exposure time is between 5 and 10min. Dense patterns with sub-50nm resolution have been experimentally demonstrated. xt Contact Person Dr. Serhiy Danylyuk Phone +49 241 8906-525 serhiy.danylyuk@tos.rwth-aachen.de Lehrstuhl für Technologie Optischer Systeme TOS |
